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(parent: 8314532) | patch
mtd: nand: samsung: Disable subpage writes on E-die NAND
authorLadislav Michl <ladis@linux-mips.org>
Tue, 9 Jan 2018 13:19:11 +0000 (14:19 +0100)
committerBoris Brezillon <boris.brezillon@free-electrons.com>
Wed, 10 Jan 2018 08:45:04 +0000 (09:45 +0100)
commit1873fa9ce8a705a65639bc1ff865b8446c64c795
tree3a51df5e12089c4f29fb877629c8f0d06ed141d3tree | snapshot
parent831453212936c4e4e49b15a3ef569ebc0591afdecommit | diff
mtd: nand: samsung: Disable subpage writes on E-die NAND

Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
does not support partial page programming, so disable subpage writes
for it. Manufacturing process is stored in lowest two bits of 5th ID
byte.

Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
Signed-off-by: Boris Brezillon <boris.brezillon@free-electrons.com>
drivers/mtd/nand/nand_samsung.c diff | blob | history
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