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mtd: nand: samsung: Disable subpage writes on E-die NAND
authorLadislav Michl <ladis@linux-mips.org>
Tue, 9 Jan 2018 13:19:11 +0000 (14:19 +0100)
committerBoris Brezillon <boris.brezillon@free-electrons.com>
Wed, 10 Jan 2018 08:45:04 +0000 (09:45 +0100)
commitd4c2886df52b21476f82c19e59d3c87e75a7d0cf
tree3a51df5e12089c4f29fb877629c8f0d06ed141d3tree | snapshot
parent98925efbfb7da0f232d27326d76e166856c4e3eccommit | diff
mtd: nand: samsung: Disable subpage writes on E-die NAND

Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
does not support partial page programming, so disable subpage writes
for it. Manufacturing process is stored in lowest two bits of 5th ID
byte.

Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
Signed-off-by: Boris Brezillon <boris.brezillon@free-electrons.com>
drivers/mtd/nand/nand_samsung.c diff | blob | history
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